Low temperature etching of Si in high density plasma using gaz sf6/O2

IBM German Manufacturing Technology Center, P.O. Box 266, D-71044 Sindelfingen ,Germany. Low temperature etching of Si in high density plasma using gaz sf6/O2.Get price

Low temperature etching of Si in high density plasma using gaz sf6/O2

Feb 01, 1995 · ELSEVIER Microelectronic Engineering 27 (1995) 453-456 MICROELECTRONIC ENGINEERING Low temperature etching of Si in high density plasma using sf6 gas/O2 Johann W. Barthaa, Johann Greschnera, M. Puechb and P. Maquinb aIBM German Manufacturing Technology Center, P.O. Box 266, D-71044 Sindelfingen, Germany bALCATEL CIT, 98, avenue de Brogny-BP, F-74009 Annecy, France Low temperature etching of SiGet price

Sulfur hexafluoride - Wikipedia

Typical for a nonpolar gas, SF 6 is poorly soluble in water but quite soluble in nonpolar organic solvents. It has a density of 6.12 g/L at sea level conditions, considerably higher than the density of air (1.225 g/L). It is generally transported as a liquefied compressed gas.Get price

sf 6 basic physical properties - AGC Chemicals

Density (gas) 6.04kg/m3 (25°C, 1atm) (liquid) 1,339kg/m3 (25°C) Vapor Pressure 1,264kPa (0°C) 2,109kPa (20°C) 3,327kPa (40°C) Surface Tension 8.02N/m (-20°C) Viscosity (gas) 1.5 x 10-5Pa・s (25°C, 1atm) (liquid) 27.7 x 10-5Pa・s (25°C) Refractive Index 1.000783 (0°C, 1atm) 0.408mL sf 6/mL oil Solubility in Water 0.0063mL sf6 gas/mL waterGet price

Decomposition of insulating gas in an RF Plasma Environment

sf6 gas exceeded 99%. When oxygen was introduced into the reactor (feed O 2 /SF 6 ratio = 2.0), η sf6 gas was ~10% less than when no oxygen was added (from 28.61 to 86.09% as the power rose from 5 to 20 W). The addition of oxygen to the reactor re-duced the electron density and, thus, reduced the dis-sociation of SF 6 and inhibited the production ofGet price

Thick benzocyclobutene etching using high density sf 6/O2 plasmas

At 300 W and 50 mTorr, maximum etch rates of 0.7 and 0.6 μm/min are achieved at 30% and 20% fluorine composition for CF4 / O2 and sf6 gas / O2 plasmas, respectively.Get price

Low temperature etching of Si in high density plasma using Sulfr hexafluoride/O2

Low temperature etching of Si with SF 6 has been studied, using a DECR system and a special Helicon type plasma source. In contrast to the current understanding of low temperature etching, we did not observe a “freezing” of the lateral etching reaction, but obtained isotropic etch profiles, even at temperatures below −120° C. Anisotropic etch profiles are obtained by an addition of O 2.Get price

(PDF) Plasma etching of Si and SiO2 in gaz sf6–O2 mixtures

A combination of gaschromatographic, mass spectrometric and infrared spectrophotometric techniques has shown the presence of SO2F2, SOF4, SOF2, SiF4, F2, O2 together with unreacted insulating gas in theGet price

(PDF) SAW DAMAGE REMOVAL AND TEXTURING OF CRYSTALLINE SILICON

A sufficient passivation is achieved by ICP sf 6 SDR with approx. 100 µs effective minority carrier lifetime at 10 15 cm-3 minority carrier density (MCD). In combination with the ICP sf6 gas/O2 texture,...Get price

(PDF) Fluorination mechanisms of Al2O3 and Y2O3 surfaces

Fluorination of Al2O3 and Y2O3 surfaces was investigated by irradiating high-density, helicon-wave CF4 /O2 and Sulfr hexafluoride /O2 plasmas. The Al2O3 surface bombarded by high-flux positive ions of the CF4Get price

Electron Density and Optical Emission Measurements of sf6 gas/O2

This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an insulating gas/O2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments. Two different process powers (100 W and 300 W) at aGet price

Oxidation of sulfur hexafluoride - ScienceDirect

Metal explosions in sf 6 and oxygen* Reaction Relative extent of reaction (per cent)t 0.1 mg Pt 3 mg Cu sf6 gas+2 --- SOF4 + F2 53 46 insulating gas+2 --- SOF2 + 2F2 33 38 Sulfr hexafluoride+O2 -- SO2Fz + 2F2 12 14 sf 6 + 02 --- SO2 + 3F2 1.4 1-9 *In all runs the initial SE6 and oxygen partial pressures were approxi- mately equal and were generally'in the range 220 to 230Get price

Processand Reliabilityof sf 6/O2 PlasmaEtched Copper TSVs

Processand Reliabilityof sf 6/O2 PlasmaEtched Copper TSVs Lado Filipovic, Roberto Lacerda de Orio, and Siegfried Selberherr Institute for Microelectronics, Technische Universität Wien, Gußhausstraße 27-29/E360, A-1040 Wien, AustriaGet price

Reactive ion beam etching of Si/SiO2 systems using sf 6/O2

Dec 02, 1990 · Applied Surface Science 46 (1990) 299-305 North-Holland 299 Reactive ion beam etching of S'/S'02 systems using gaz sf6/OZ chemistry D. Korzec, T. Kessler and J. Engemann Uniuervity of Wuppertal, Department of Electrical Engineering, 5600 Wuppertal !, Fed. Rep. of Germany Received 29 May 1990; accepted for publication 13 July 1990 A reactive ion beam etching (RIBE) of S'/S'02 structures using SFbGet price

Journal of Physics: Conference Series OPEN ACCESS Related

micromachining of silicon using an gaz sf6/O2 inductively coupled plasma F Jiang, A Keating, M Martyniuk et al.-Low-pressure nonequilibrium plasma for a top-down nanoprocess Toshiaki Makabe and Takashi Yagisawa-Recent citations Electron collision cross sections of CHF 3 and electron transport in CHF 3 and CHF 3 Ar mixtures Satoru Kawaguchi et al-Get price

(PDF) Silicon nitride etching in high- and low-density

Silicon nitride etching in high- and low-density plasmas using Sulfr hexafluoride/O2/N2 mixtures March 2003 Journal of Vacuum Science Technology A Vacuum Surfaces and Films 21(2):461-469Get price

$QLVRWURSLF5HDFWLYH,RQ(WFKLQJRI6LOLFRQ8VLQJ6) 2 +) *DV 0L[WXUHV

C1 and Br containing gas mixtures like Sulfr hexafluoride-CBrF3, i insulating gas- C2C13F3, 2 and sf 6-C2CIF~. 3.4 Also etching of silicon with gaz sf6 at very low temperatures 5 or at very low pressures 6 can be used to produce anisotropie etch profiles. Furthermore Sulfr hexafluoride/O2 gas mixtures 7-14 were found to anisotropically etch silicon.Get price

sf6 o2 leak rate Wika

Mar 16, 2020In Sulfr hexafluoride/O2 and CF4/O2 plasmas oxygen scavenging controls the amount of free fluorine [7]. Oxygen is an active ingredient in many etching processes, for example, photoresist stripping where CO2 and H2O are generated as photoresist is etched.Get price

Density of Gases: Sulfr hexafluoride, liquid nitrogen, dry ice. Skyfall

Cool physical experiment demonstrates density of gases - chemical skyfallGet price

Electron Density and Optical Emission Measurements of sf 6/O2

Apr 19, 2012 · This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF 6 /O 2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments.Get price

Myth About gaz sf6 Gas In Electrical Equipment

Apr 12, 2021 · This is just the UK, insulating gas stays in the atmosphere for a minimum 1000 years where as CO2 100 years. sf6 gas is on the increase the US expect a 6.2% increase over the next 6 years. sf6 gas might not damage the Ozone but it will accelerate Global Warming given the fact that it stays in the atmosphere longer can cause more damage over a longer period of time.Get price

High-temperature etching of SiC in Sulfr hexafluoride/O2 inductively coupled

Nov 17, 2020 · Sulfur hexafluoride SF 6 (GOST TU 6-02-1249-83, purity 99.998%) was used as the etchant main gas. Etching processes were performed in a mixture of SF 6 and O 2 (high purity, TU 2114-001-05798345Get price

(PDF) The black silicon method. VIII. A study of the

A study of the performance of etching silicon using sf 6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source Henri Jansen*, Meint de Boer, Henk Wensink, Ben Kloeck, Miko Elwenspoek MESA Research Institute, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands Revised 23 February 2001; accepted 26Get price

Influence of gas composition on convective and diffusive

The lungs of six anesthetized and mechanically ventilated beagle dogs were equilibrated with air or either of the test atmospheres, He-O2 or Sulfr hexafluoride-O2, where nitrogen was replaced by helium (He) or sulfur hexafluoride (sf 6). Due to differences in gas density and gas viscosity Reynolds numbers varied by a factor of twelve and Ar diffusivity by aGet price

Siemens gaz sf6 Gas Density Monitoring

Siemens sf 6 Gas Density Monitoring Author: Todd Rittenhouse Subject: Todd Rittenhouse from Siemens, gave a presentation on the operational practices and procedures for using condition monitoring and asset management to manage emissions. This presentation was given at the US EPA2014 Workshop on sf 6 Reduction Strategies h eld May 6-7, 2014Get price

Solvay Special Chemicals

(Schneider Electric, Germany) Fig. 12 Sulfr hexafluoride-gas-insulated medium voltage switchgear, 12 – 24 kV (Driescher, Germany) Fig. 14 insulating gas-gas-insulated medium voltage switchgear, 24 kV as double busbar system (ABB, Germany) Fig. 15 Sulfr hexafluoride-gas-insulated medium voltage switchgear, for secondary distribution up to 40.5 kV (Ormazabal, Spain)Get price

Sulfr hexafluoride Gas Properties - sayedsaad.com

In short, gaz sf6 at atmospheric pressure is a heavier gas than air, it becomes liquid at - 63.2°C and in which noise propagates badly. gaz sf6 on the market. Sulfr hexafluoride which is delivered in cylinders in liquid phase, contains impurities (within limits imposed by IEC standards No. 376) Carbon tetra fluoride (CF4) 0.03 %Get price

Sulfur hexafluoride, SF 6 , is an extremely dense gas. How

Chemistry General Chemistry - Standalone book (MindTap Course List) Sulfur hexafluoride, SF 6 , is an extremely dense gas. How does its density compare with the density of air? Use a molar mass for air of 29.0 g/mol.Get price

Modeling of inductively coupled plasma sf 6/O2/Ar plasma

Dec 26, 2013 · A global model has been developed for low-pressure, inductively coupled plasma (ICP) insulating gas/O2/Ar mixtures. This model is based on a set of mass balance equations for all the considered species, coupl...Get price